Full text loading...
(a) The schematic configuration of the Ag/InGaAsP Schottky SPP-emitting diode. MQW: multiple-QW. (b) The electric-field distribution of the fundamental surface plasmon mode. (c) The electric field direction for the TM modes and the propagation direction of SPPs.
(a) Polarized PL spectra of samples with Ag covering and without Ag covering. (b) Polarized EL spectra of the edge-emission from samples with Ag covering at 91 A/cm2.
(a) TM polarized EL spectra of the diode measured at varying injection levels. The forward current density-voltage characteristic is shown as an inset. Calculated band diagrams under (b) 0 V, (c) 1 V, and (d) 4 V biases, respectively. The dashed vertical line on top of the (b) represents the interface between Ag and the InGaAsP SCH layers; the symbols in different colors in (b) - (d) on the right side indicate the nearby energy levels drawn in corresponding colors: Ec, Ef, Ev, EFe, and EFh are the conduction band minimum, Fermi level, the valence band maximum, the electron quasi-Fermi level, and the hole quasi Fermi level, respectively.
(a) EL polarization ratio (TM: TE) of the diode versus current density. The insets are infrared microscopic images taken at 91 A/cm2 for TM and TE modes, respectively, and the white arrows in the image represent the locations of the edge of the emitting device. (b) Calculated polarization ratio (TM: TE) versus the separation of the recombination zone center and the metal. The inset is the calculated injection ratio versus the forward bias.
Article metrics loading...