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Transport of perpendicular spin in a semiconductor channel via a fully electrical method
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10.1063/1.4792690
/content/aip/journal/apl/102/6/10.1063/1.4792690
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792690
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the device structure with the measurement geometry. (b) Magnetic properties of ferromagnetic system consisting of a 20 nm thick Tb20Fe62Co18 layer and a 0.8 nm thick Co40Fe40B20 layer with and without a MgO layer.

Image of FIG. 2.
FIG. 2.

Three-terminal Hanle signals at 20 K (a) with a MgO barrier, (b)without any barrier, and (c) with Ta/MgO barriers. In (a), when the perpendicular field, which is parallel to the magnetization of ferromagnet, isapplied, no inverted Hanle signal is detected (triangles).

Image of FIG. 3.
FIG. 3.

Hanle signals at various temperatures. The curves are shifted for clarity.

Image of FIG. 4.
FIG. 4.

Temperature dependences of spin signals and parameters of the device with a MgO barrier. (a) Magnitude of Hanle signal, ΔV S /I and (b)spin lifetime, τ sp. The dotted line in (a) presents the magnitude of Hanle signal for the device without a MgO barrier.

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/content/aip/journal/apl/102/6/10.1063/1.4792690
2013-02-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport of perpendicular spin in a semiconductor channel via a fully electrical method
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792690
10.1063/1.4792690
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