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Photoluminescence spectra of Eu3+ in Si-doped, Mg-doped, and (Mg and Si)-doped GaN:Eu at 15 K excited by the 335 nm line. The spectra were measured with the same conditions and the intensities are comparable. Eu3+ intensities in u-GaN:Eu and Si-doped GaN:Eu are multiplied twice for clarity.
5D0 to 7F0 transition of Eu3+ luminescence in (Mg and Si)-codoped GaN:Eu at 15 K.
Excitation wavelength dependent PL intensity of Eu3+ in (Mg and Si)-codoped GaN:Eu. For all cases, the power density is about 1 KW/cm2.
Intensity ratio of peak 5 and peak 1 of Eu3+ versus excitation wavelength in (Mg and Si)-codoped GaN:Eu at 15 K and RT.
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