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Space charge polarization induced memory in SmNiO3/Si transistors
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10.1063/1.4790394
/content/aip/journal/apl/102/7/10.1063/1.4790394
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4790394
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of (a) a MOS capacitor structure and (b) a MOSFET structure with a SNO film as a gate insulator sandwiched between silicon dioxide layers.

Image of FIG. 2.
FIG. 2.

Crystalline phase investigation of a SNO film: (a) Representative 2θ–ω scan of XRD analysis and (b) resistance versus temperature as the films are heated and cooled.

Image of FIG. 3.
FIG. 3.

(a) Voltage hysteresis and temperature dependence of the gate capacitance and (b) frequency dependence of the gate capacitance and the hysteresis window of MOS capacitance measured at −1.6 V.

Image of FIG. 4.
FIG. 4.

Frequency dependence of the gate capacitance of a MOSFET device: (a) capacitance-voltage (C-V) curves with various frequency and (b) threshold voltage, hysteresis window, and inversion capacitance as a function of frequency.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the gate capacitance: (a) capacitance-voltage curves at various temperature and (b) threshold voltage, hysteresis window, and inversion capacitance as a function of temperature, and (c) state retention characteristics of a MOSFET device.

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/content/aip/journal/apl/102/7/10.1063/1.4790394
2013-02-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Space charge polarization induced memory in SmNiO3/Si transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4790394
10.1063/1.4790394
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