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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
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10.1063/1.4791676
/content/aip/journal/apl/102/7/10.1063/1.4791676
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791676
/content/aip/journal/apl/102/7/10.1063/1.4791676
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/content/aip/journal/apl/102/7/10.1063/1.4791676
2013-02-22
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791676
10.1063/1.4791676
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