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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
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10.1063/1.4791676
/content/aip/journal/apl/102/7/10.1063/1.4791676
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791676
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ID-VG and corresponding Gm-VG at linear region measurement after HCS for high k/metal gate n-MOSFETs for (a) I/O and (b) SP devices. Insets show the CGD measurement after HCS.

Image of FIG. 2.
FIG. 2.

The degradation of ID, Gm, and SS versus stress time extracted for SP and I/O devices under HCS.

Image of FIG. 3.
FIG. 3.

ID-VG and corresponding IB-VG measurement showing GIDL current varying with stress time at VD = 2.4 V for (a) I/O and (b) SP devices. Insets show (a) electron trapping decrease (b) hole trapping increase in band-to-band tunneling distance.

Image of FIG. 4.
FIG. 4.

Diagram of device profile corresponding to lateral energy band showing (a) electron injection into oxide layer (b) hole injection into high-k layer above overlap at drain side during HCS.

Image of FIG. 5.
FIG. 5.

The lateral electric field in T-CAD simulation at Y = 0.99 μm. Inset shows two simulation conditions: (a) electron injection within regions A and Band (b) electron and hole injections at regions A and B, respectively.

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/content/aip/journal/apl/102/7/10.1063/1.4791676
2013-02-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791676
10.1063/1.4791676
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