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Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications
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10.1063/1.4791788
/content/aip/journal/apl/102/7/10.1063/1.4791788
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791788
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the HEMT structure used in this work. Gold nanoparticles covered all areas of the device wafer and did not specifically adsorb into channels as shown here. The HEMT is not drawn to scale.

Image of FIG. 2.
FIG. 2.

Surface potential of the Au NPs compared to the AlGaN area surrounding the NPs. Error bars show standard error. NP treated (NP); NP-alkanethiol treated (NP-Thiol).

Image of FIG. 3.
FIG. 3.

(dID/dVGS)/ID versus VDS and VGS for a representative HEMT prior to NP or alkanethiol treatments. For this HEMT, the operating point that gives the greatest relative ΔID for ΔVGS is near VDS = 0.5 V and VGS = −1.5 V.

Image of FIG. 4.
FIG. 4.

(a) Relative ΔID with VDS and VGS biased near the optimal operating point. (b) Relative ΔID with VGS floating. Asterisks show statistically significant differences. Pound symbols indicate value is significantly different from 0. For both cases, p < 0.05. All values are relative to pretreatment ID at the specified bias. Least squares means are displayed with error bars showing standard error. The calculated least squares means were the same as the observed means. NP treated (NP); NP-alkanethiol treated (NP-Thiol).

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/content/aip/journal/apl/102/7/10.1063/1.4791788
2013-02-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4791788
10.1063/1.4791788
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