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(a) Representative low-bias I–V characteristics obtained by nanoprobing an individual InN nanowire with length μm and radius nm. The top-left inset shows the SEM image of such nanoprobing with a tungsten tip. The bottom-right inset shows the I–V characteristics of the same nanowire at high bias. (b) The nanowire resistivity derived from the linear fit as shown in (a) from two growth batches.
(a) The I–V characteristics of InN nanowires in a logarithmic scale. Filled squares: length μm and radius nm; open circles: length μm and radius nm. (b) The derived crossover voltage Vc and (c) the voltage exponential β in the SCL conduction regime as a function of the nanowire radius, respectively.
The derived free electron concentration n 0 as a function of the nanowire radius r in a logarithmic scale. The line is a linear fit that gives a slope . The inset shows the plot in a linear scale, and the curve is given by .
The derived electron mobility μ as a function of the free carrier concentration n 0 in a logarithmic scale; the open symbols are from theoretical calculations based on InN planar structures (see Refs. 1 and 2 ). The inset shows the derived electron mobility μ as a function of the nanowire radius r.
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