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Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
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10.1063/1.4792837
/content/aip/journal/apl/102/7/10.1063/1.4792837
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4792837

Figures

Image of FIG. 1.
FIG. 1.

(a) Raman spectra obtained for backscattering from the topside (black) and backside (blue) of sample A. The Raman spectra are vertically shifted for clarity. The grey dashed line indicates the Raman spectrum of the ZnO substrate. (b) Raman spectrum of sample B. All spectra in (a) and (b) were excited at 1.96 eV. The asterisks indicate the E 2-phonon frequency of the ZnO substrate.

Image of FIG. 2.
FIG. 2.

Color-coded spectral Raman images for linescans along the cleaved edge of sample C using excitation energies of (a) 1.96 eV and (c) 3.00 eV. Raman spectra are shown in (b) and (d) for the positions indicated by horizontal lines in (a) and (c), respectively. The asterisk in (d) indicates the E 2-phonon frequency of the ZnO substrate.

Image of FIG. 3.
FIG. 3.

Color-coded spectral Raman images for linescans along the cleaved edge of (a) the covered and (c) the bare sample D for excitation at 1.96 eV. Raman spectra for the positions indicated by the horizontal lines are shown in (b) and (d) for the linescans in (a) and (c), respectively. The Raman spectra in (b) are vertically shifted for clarity. The asterisk in (b) indicates the E 2-phonon frequency of the ZnO substrate. Note that the widths of the maxima in the intensity profiles along the z-direction are given by the spatial resolution of our μ-Raman measurements.

Image of FIG. 4.
FIG. 4.

Raman spectrum of the bare sample D measured close to the surface at an energy of 1.96 eV in the configuration . The symbols denote the experimental data, the thick solid line denotes a lineshape fit, and the shaded areas indicate the individual components of the fit. The inset shows the position-dependent integrated intensity of the band as determined from corresponding fits of all spectra acquired in a line scan across the InN film.

Tables

Generic image for table
Table I.

Substrate temperature during InN growth (TS ), film thickness (t), bulk electron density estimated by Raman measurements (n), and FWHM of XRD ω scans (FWHM102) for the investigated InN films.

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/content/aip/journal/apl/102/7/10.1063/1.4792837
2013-02-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4792837
10.1063/1.4792837
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