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(a) Photocurrent transient response of InN measured at different temperatures with light on and off, respectively. Steady-state dark-current and saturated photocurrent values are shown by the dash line at 300 K. A schematic of the sample geometry is shown in the inset. (b) Photocurrent transient response of InN measured at 130 K.
Carrier concentration (square) and mobility (circle) of InN in dark condition (open) and under illumination (solid) at temperatures from 100 to 300 K.
Energy-level diagrams showing electronic transitions responsible for the photocurrent trasient response (a) at the laser turned on and (b) at the laser turned off for degenrate InN sample with superband-gap excitation.
Configuration coordinate diagram of the deep donor in InN. E c(Q) and E d(Q) are the sums of the electronic and elastic energies corresponding to the conduction band and to the donor state, respectively, as a function of configuration coordinate Q. EF , Eph , and ΔE c are the Fermi level, photoionization energy, and electron capture barrier, respectively, the dotted line marking Fermi level here is just for indicating its relative energy position from the bottom of conduction band.
Transition temperature as a function of residual carrier concentration, error bars represent scattered data over five separate measurements.
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