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Temperature sensitive photoconductivity observed in InN layers
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10.1063/1.4793190
/content/aip/journal/apl/102/7/10.1063/1.4793190
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793190
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Photocurrent transient response of InN measured at different temperatures with light on and off, respectively. Steady-state dark-current and saturated photocurrent values are shown by the dash line at 300 K. A schematic of the sample geometry is shown in the inset. (b) Photocurrent transient response of InN measured at 130 K.

Image of FIG. 2.
FIG. 2.

Carrier concentration (square) and mobility (circle) of InN in dark condition (open) and under illumination (solid) at temperatures from 100 to 300 K.

Image of FIG. 3.
FIG. 3.

Energy-level diagrams showing electronic transitions responsible for the photocurrent trasient response (a) at the laser turned on and (b) at the laser turned off for degenrate InN sample with superband-gap excitation.

Image of FIG. 4.
FIG. 4.

Configuration coordinate diagram of the deep donor in InN. E c(Q) and E d(Q) are the sums of the electronic and elastic energies corresponding to the conduction band and to the donor state, respectively, as a function of configuration coordinate Q. EF , Eph , and ΔE c are the Fermi level, photoionization energy, and electron capture barrier, respectively, the dotted line marking Fermi level here is just for indicating its relative energy position from the bottom of conduction band.

Image of FIG. 5.
FIG. 5.

Transition temperature as a function of residual carrier concentration, error bars represent scattered data over five separate measurements.

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/content/aip/journal/apl/102/7/10.1063/1.4793190
2013-02-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature sensitive photoconductivity observed in InN layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793190
10.1063/1.4793190
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