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The critical current of a MgB2/native oxide/Nb junction modulated by applied magnetic field (solid line) fitted by a theoretical fit with λ = 37 nm (dotted line). Inset shows a schematic of the junction in an external magnetic field .
(a) Schematic and (b) optical image of DC SQUID.
Voltage across a DC SQUID modulated by microstrip current at 3.2 K. The SQUID is biased at various current from 0.4 mA to 2 mA.
Temperature dependence of normalized inverse-squared penetration depth from the SQUIDs measurement compared with the theory proposed by Golubov et al. 5 for the clean (dashed line) and dirty (dashed double dotted line) limits in the c-axis and dirty limit (dashed-dotted line) in the ab-axis. Also plotted is the result of a mutual inductance measurement (solid line) on a 20 nm-thick MgB2 film.
Penetration depth of MgB2 calculated from 12 square-shaped junctions of different length and top electrode materials.
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