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GaN buffer iron density profiles of the investigated AlGaN/GaN devices from SIMS analysis. The dashed lines show the profiles used in the simulation. The carbon profile measured in a similar wafer is also shown.
Trap conductance as a function of frequency for different baseplate temperatures for a representative high Fe-density AlGaN/GaN HEMT. The inset displays the activation energy extraction.
Measured (symbols) and simulated (solid lines) trap conductance as a function of frequency for different baseplate temperatures for (a) high, (b)medium, and (c) low residual GaN channel iron doping concentration.
Simulated GaN conduction band diagram for the three iron doping concentrations at room temperature for a drain current around 10−6 A. The iron level EFe is located 0.72 eV below the conduction band.
Extracted activation energies and capture cross sections of Fig. 3 at 293 K.
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