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Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
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10.1063/1.4793196
/content/aip/journal/apl/102/7/10.1063/1.4793196
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793196
/content/aip/journal/apl/102/7/10.1063/1.4793196
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/content/aip/journal/apl/102/7/10.1063/1.4793196
2013-02-19
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793196
10.1063/1.4793196
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