Full text loading...
(a) Schematic diagram and (b) band diagram of p-GaN/PVA-ZnO NPs heterojunction diode.
(a) XRD patterns and (b) high resolution SEM results (100 nm) of PVA coated ZnO nanoparticles created by top-down wet-chemical etching method with an average size of 80 nm.
(a) Dark current and its exponential fitting of p-GaN/PVA coated ZnO colloidal nanoparticles heterojunction as well as the inset of (a) dark current plotted in log scale, (b) its I-V plot under darkness and front illumination of 280 nm LED with optical intensity of 42.85 mW/cm2.
Time response of p-GaN PVA-ZnO NPs heterojunction (a) shows bias dependence and (b) at 0 V bias the fastest response is achieved with 25 ms rising time and 50 ms falling time under back illumination.
(a) Wavelength response of p-GaN/PVA-ZnO NPs heterojunction illuminated from front (black square) and back (red circle) sides under 0 V bias, and (b) transmission and absorption spectra of Mg doped p-GaN show a cut-off wavelength at 365 nm.
Article metrics loading...