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Activation curves showing the quantum efficiency of Cu(100) (dashed black line), CsBr/Cu(100) (triangles, green line), and KBr/Cu(100) (squares, red line). The measured quantum efficiency of Cu(100) is 5 × 10−5 at 4.7 eV. The samples were activated with a 266 nm ps pulsed laser and an average power of 8 mW.
Log-log plots of photoemission yield versus laser power for Cu(100) (circles), CsBr/Cu(100) before activation (triangles), CsBr/Cu(100) after activation (+), KBr/Cu (100) before activation (squares), and KBr/Cu (100) after activation (x).
Photoelectron yield (in counts per second, CPS) versus photoelectron energy for CsBr/Cu(100) and KBr/Cu(100) samples before and after activation. The photoexcitation source is the 266 nm ps laser (photon energy is 4.66 eV). The measured photoelectron peak widths are used to determine work function changes due to thin film deposition and laser activation KBr and CsBr thin films.
XPS spectra of Cu2p, Br3d, Cs3d, and K2p peaks in bare Cu (100), CsBr/Cu (100), and KBr/Cu (100) samples before and after activation.
Work functions of photocathode materials.
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