Molecular beam epitaxial growth of strain-balanced InAs/InAs1−xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescencelinewidth simulations show satisfactory agreement with experiments.
Received 24 January 2013Accepted 07 February 2013Published online 20 February 2013
The authors are grateful for the support of ARO MURI program W911NF-10-1-0524 (administered by U.S. Army Research Office and monitored by William W. Clark) and an AFOSR Grant (FA9550-10-1-0129 monitored by Dr. Kitt Reinhardt), and they gratefully acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy and LeRoy Eyring Center for Solid State Science at Arizona State University.
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