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All-optical tuning of the Stokes shift in PbS quantum dots
1. I. Moreels, K. Lambert, D. Smeets, D. D. Muynck, T. Nollet, J. C. Martins, F. Vanhaecke, A. Vantomme, C. Delerue, G. Allan, and Z. Hens, ACS Nano 3, 3023 (2009).
5. W. Lin, K. Fritz, G. Guerin, G. R. Bardajee, S. Hinds, V. Sukhovatkin, E. H. Sargent, G. D. Scholes, and A. Winnik, Langmuir 24, 8215 (2008).
10. J. S. Wang, B. Ullrich, and G. J. Brown, in Materials Research Society Symposium Proceedings, Vol. 1409.
12.The subtle feature around 0.88 eV below the OA peak stems from the transmission characteristics of the quartz beam splitter, which was used for the OA measurements. The PL experiments were carried out with a CaF2 beam splitter, and therefore, do not show this feature.
13.We pointed out that Iin = 5 W/cm2 represents the threshold intensity for acceptable PL signals for the specific sample used. Therefore, the optical alteration of the sample due to the laser irradiance is kept at a minimum and EPL(T) reveals qualitatively the same behavior as Eg(T) [see Ref. 8].
14.Originally, an equivalent version of Eq. (2) was used by B. Ullrich and A. Erlacher [Appl. Phys. Lett. 87, 151115 (2005)] to fit the forward current dependence on the applied bias of a non-ideal GaAs/Si photodiode formed by pulsed-laser deposition.
17. E. F. Schubert, Doping in II-V Semiconductors (Cambridge University Press, Cambridge, 1993), p. 37.
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