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Typical I-V characteristics of the p-GaN/Mn:GaN/n-GaN p-i-n structures taken at room temperature. For the photocurrent, samples were illuminated at light wavelength of 350 nm with power of 21.7 μW.
Typical spectral responses of the p-GaN/Mn:GaN/n-GaN p-i-n structures taken at room temperature. The reference sample means a p-i-n structure with Mn-doped GaN layer.
Typical transmission spectra measured from the undoped and Mn-doped GaN films deposited on double-polished sapphires substrates. The inset is the schematic energy diagram for Mn deep level in GaN and possible absorption routes labeled A, B, and C.
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