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XRR profile from n-AZO/p-GaN heterojunction. The insets show TEM lattice image at the AZO/GaN interface and the corresponding SAED pattern of cross section in zone axis [11–20].
XSPEM/S measurements on the cleaved surface of n-AZO/p-GaN heterojunction. (a) Cross-sectional SEM image of the cleavage surface. (b) Chemical mapping images taken from selected energy channels show two distinctive chemical regions, which corresponds to AZO and GaN, respectively. (c) μPES spectra taken in theregions of AZO [blue point marked in (a)], n-AZO/p-GaN interface (red point), and GaN (green point).
The dependence of α 2 on photon energy hν for (a) n-AZO and (b)p-GaN, respectively.
Schematics of the bands of (a) p-GaN and (b) n-AZO. (c) Representation of the band alignment at n-AZO/p-GaN heterojunction.
Semi-logarithmic I-V characteristics of n-AZO/p-GaN heterojunction. The insets show the band diagram explaining the occurrence of current elevation in reverse and forward I-V curve, respectively.
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