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Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction
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10.1063/1.4793434
/content/aip/journal/apl/102/7/10.1063/1.4793434
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793434
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Figures

Image of FIG. 1.
FIG. 1.

XRR profile from n-AZO/p-GaN heterojunction. The insets show TEM lattice image at the AZO/GaN interface and the corresponding SAED pattern of cross section in zone axis [11–20].

Image of FIG. 2.
FIG. 2.

XSPEM/S measurements on the cleaved surface of n-AZO/p-GaN heterojunction. (a) Cross-sectional SEM image of the cleavage surface. (b) Chemical mapping images taken from selected energy channels show two distinctive chemical regions, which corresponds to AZO and GaN, respectively. (c) μPES spectra taken in theregions of AZO [blue point marked in (a)], n-AZO/p-GaN interface (red point), and GaN (green point).

Image of FIG. 3.
FIG. 3.

The dependence of α 2 on photon energy for (a) n-AZO and (b)p-GaN, respectively.

Image of FIG. 4.
FIG. 4.

Schematics of the bands of (a) p-GaN and (b) n-AZO. (c) Representation of the band alignment at n-AZO/p-GaN heterojunction.

Image of FIG. 5.
FIG. 5.

Semi-logarithmic I-V characteristics of n-AZO/p-GaN heterojunction. The insets show the band diagram explaining the occurrence of current elevation in reverse and forward I-V curve, respectively.

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/content/aip/journal/apl/102/7/10.1063/1.4793434
2013-02-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793434
10.1063/1.4793434
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