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Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
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10.1063/1.4793483
/content/aip/journal/apl/102/7/10.1063/1.4793483
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793483

Figures

Image of FIG. 1.
FIG. 1.

(a) C-V characteristics for Al2O3/Ga-polar GaN before PMA. (b) Flat-band voltage versus oxide thickness for the Ga-polar GaN for different PMA temperatures.

Image of FIG. 2.
FIG. 2.

(a) C-V profile for Al2O3/N-polar GaN after 400 °C PMA. (b) Flat-band voltage versus oxide thickness for Al2O3/N-polar GaN at different temperature anneals.

Image of FIG. 3.
FIG. 3.

(a) C-V profile for Al2O3/m-plane GaN without PMA. (b) Flat-band voltage versus oxide thickness for the m-plane GaN for different PMA temperatures.

Image of FIG. 4.
FIG. 4.

C-V profile for Al2O3/Al0.3Ga0.7N/AlN/ GaN before and after 400 °C, 450 °C, 500 °C PMA.

Image of FIG. 5.
FIG. 5.

Gate leakage current in Al2O3/Ga-polar GaN after different PMA temperatures showing suppression of leakage with increased PMA.

Tables

Generic image for table
Table I.

Electric field in the oxide and interface charge density for different polarities of GaN after PMA.

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/content/aip/journal/apl/102/7/10.1063/1.4793483
2013-02-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/7/10.1063/1.4793483
10.1063/1.4793483
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