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Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic structure of a c-AlN microdisk containing c-GaN QDs. (b) Side view SEM image of a 60 nm thick freestanding microdisk with 2.6 μm diameter fabricated by RIE etching.

Image of FIG. 2.
FIG. 2.

PL spectra taken at 7 K of an unstructured sample as reference (a) and of c-GaN QDs embedded in a 2.6 μm diameter c-AlN microdisk (black line) compared to FDTD simulations (grey lines) (b). Horizontal arrows indicate the experimental mode spacing of the modes with radial mode orders n = 1 and 2.

Image of FIG. 3.
FIG. 3.

(a) FDTD simulations of the WGM at E1  = 3.57 eV (mode 1, n = 1) and (b) of the WGM at E2  = 3.55 eV (mode 2, n = 2). The black circle illustrates the edge of the 2.6 μm microdisk. Red corresponds to the highest and blue to the lowest field density.

Image of FIG. 4.
FIG. 4.

PL spectra taken at 7 K of microdisks with different diameters (black lines). FDTD calculations (grey lines) are plotted to identify resonator modes. The mode spacing (indicated by horizontal arrows) increases with decreasing disk diameter.

Image of FIG. 5.
FIG. 5.

Correlation between mode spacing and the microdisk diameter. The experimental results are indicated by dots and the mode spacing of the FDTD calculations by triangles. The fitted graph shows 1/d dependence of our data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots