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Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors
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10.1063/1.4793996
/content/aip/journal/apl/102/8/10.1063/1.4793996
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/8/10.1063/1.4793996

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-section of the coplanar a-IGZO TFTs.

Image of FIG. 2.
FIG. 2.

Channel length variation of self-aligned coplanar a-IGZO TFTs with (a) SiNx passivation and (b) SiO2 passivation. W is fixed at 20 μm and Vds = 0.1 V. Inset shows the subthreshold swing (SS) as a function of channel length (L). SS was taken as the minimum value of (∂ log (Ids)/∂ Vgs)−1.

Image of FIG. 3.
FIG. 3.

Threshold voltage as a function of channel length (L) for a-IGZO TFTs with SiNx and SiO2 passivation.

Image of FIG. 4.
FIG. 4.

(a) I-V and (b) C-V characteristics of a-IGZO TFTs with channel lengths (L) varying from 4 to 20 μm for fixed channel width (W) = 1000 μm. (c) Evolutions of the flat band Fermi level (EF) relative to the conduction band (EC) and flat band carrier density (nFB) as function of channel length.

Image of FIG. 5.
FIG. 5.

Carrier distribution across the channel for TFTs with (a) long-channel and (b) short-channel.

Tables

Generic image for table
Table I.

Extracted TFT parameters for a-IGZO TFTs with SiNx passivation and channel length (L) varying from 4 to 20 μm. TFT parameters were extracted from the combined analysis of I-V and C-V curves according to the method described in Ref. 15 .

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/content/aip/journal/apl/102/8/10.1063/1.4793996
2013-03-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/8/10.1063/1.4793996
10.1063/1.4793996
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