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Schematic cross-section of the coplanar a-IGZO TFTs.
Channel length variation of self-aligned coplanar a-IGZO TFTs with (a) SiNx passivation and (b) SiO2 passivation. W is fixed at 20 μm and Vds = 0.1 V. Inset shows the subthreshold swing (SS) as a function of channel length (L). SS was taken as the minimum value of (∂ log (Ids)/∂ Vgs)−1.
Threshold voltage as a function of channel length (L) for a-IGZO TFTs with SiNx and SiO2 passivation.
(a) I-V and (b) C-V characteristics of a-IGZO TFTs with channel lengths (L) varying from 4 to 20 μm for fixed channel width (W) = 1000 μm. (c) Evolutions of the flat band Fermi level (EF) relative to the conduction band (EC) and flat band carrier density (nFB) as function of channel length.
Carrier distribution across the channel for TFTs with (a) long-channel and (b) short-channel.
Extracted TFT parameters for a-IGZO TFTs with SiNx passivation and channel length (L) varying from 4 to 20 μm. TFT parameters were extracted from the combined analysis of I-V and C-V curves according to the method described in Ref. 15 .
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