Full text loading...
(a) SEM image and (b) XRD pattern obtained from the copper oxide thin-film vacuum annealed at 800 °C for 20 s using the RTA system.
Ln (I D/V DS) versus |V DS|1/2 plot for measured data at V GS = −20 V in the fabricated Cu2O TFT.
(a) Transfer curves of the Cu2O TFT measured at various temperatures ranging from 25 to 75 °C. (b) Semilog plot of |I D| versus T−1/4 obtained at various V GSs. (c) Semilog plot of |I D| versus 1000/T obtained at various V GSs. (d) Prefactor (|I D0|) versus activation energy (E a), which shows that |ID 0| increases exponentially with E a. This relation obeys the MN rule.
(a) Surface band bending (|ϕ s(V F)|) and (b) surface charge density (n(ϕ s)) calculated from the measured data at T = 25 °C based on the assumption that V FB (flat band voltage) = 0 (V).
(a) Comparison of calculated and measured activation energy (E a) when V FB = 0 V and E aFB = 0.33 eV. The agreement of two curves represents that the assumption of zero V FB is a reasonable one. (b) Subgap DOS extracted as a function of the energy in fabricated Cu2O TFTs.
Article metrics loading...