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Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
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10.1063/1.4794061
/content/aip/journal/apl/102/8/10.1063/1.4794061
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/8/10.1063/1.4794061
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image and (b) XRD pattern obtained from the copper oxide thin-film vacuum annealed at 800 °C for 20 s using the RTA system.

Image of FIG. 2.
FIG. 2.

Ln (I D/V DS) versus |V DS|1/2 plot for measured data at V GS = −20 V in the fabricated Cu2O TFT.

Image of FIG. 3.
FIG. 3.

(a) Transfer curves of the Cu2O TFT measured at various temperatures ranging from 25 to 75 °C. (b) Semilog plot of |I D| versus T−1/4 obtained at various V GSs. (c) Semilog plot of |I D| versus 1000/T obtained at various V GSs. (d) Prefactor (|I D0|) versus activation energy (E a), which shows that |ID 0| increases exponentially with E a. This relation obeys the MN rule.

Image of FIG. 4.
FIG. 4.

(a) Surface band bending (|ϕ s(V F)|) and (b) surface charge density (n(ϕ s)) calculated from the measured data at T = 25 °C based on the assumption that V FB (flat band voltage) = 0 (V).

Image of FIG. 5.
FIG. 5.

(a) Comparison of calculated and measured activation energy (E a) when V FB = 0 V and E aFB = 0.33 eV. The agreement of two curves represents that the assumption of zero V FB is a reasonable one. (b) Subgap DOS extracted as a function of the energy in fabricated Cu2O TFTs.

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/content/aip/journal/apl/102/8/10.1063/1.4794061
2013-02-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the charge transport mechanism and subgap density of states in p-type Cu2O thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/8/10.1063/1.4794061
10.1063/1.4794061
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