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Schematic of cavity design and leaky mode; (a) resonant electric field, (b) schematic band diagram of 1D photonic crystal guided modes, with lowest two bands shown for waveguides with large (blue) and small (red) holes, and frequencies corresponding to leaky modes above the lightline shaded in gray; (c)FDTD calculation of second-order mode propagating through cavity; (d) dielectric environment around polycrystalline silicon (pSi) core in the CMOS process used, showing oxide cladding and SiN liner; and (e) SEM of the pSi of the fabricated cavity.
(a) Optical micrograph of device tested, with grating couplers and surface normal oriented (i.e., out of page) fibers labeled. (b) Resonant measured transmission spectra (circles) and fits (lines), with input/output fibers centered (black); and with the output fiber slightly off-center by 2 μm and the input fiber at (blue and red). The solid lines show fits to the data, all indicating a loaded Q of 45 000.
Optical modulation via carrier excitation with 785 nm light; (a) tuning of Lorentzian feature, allowing a maximum of 10 dB extinction; (b) tuning of feature obtained with fibers off center and same 785 nm excitation, allowing 17 dB extinction; (c) 100 MB/s bit sequences applied to 785 nm laser, illustrating difference in extinction achievable with Fano (blue) and Lorentzian (green) profiles with the same modulation signal applied to the cavity in both cases.
Measured power-dependence of transmission spectra, with (a) 1.5 μW (b) 25 μW, (c) 85 μW coupled into the input bus waveguide. As the power is increased, the peak and minimum transmissions fall as the cavity Q and hence the power transmitted via the resonant channel decrease (b). Eventually bistability sets in, evident in the discontinuity in (c).
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