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Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment
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10.1063/1.4793418
/content/aip/journal/apl/102/9/10.1063/1.4793418
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4793418
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

DOS energy profile from selected cells showing the presence of two defects at 100 meV (D1) and 210 meV (D2).

Image of FIG. 2.
FIG. 2.

Simulated JV curves for different D2 defect densities.

Image of FIG. 3.
FIG. 3.

Raman spectrum from a CIGS absorber corresponding to cells with lower point defect densities, showing A1 and E/B CIGS peaks and OVC contribution at 150 cm−1 spectral region.

Image of FIG. 4.
FIG. 4.

Frequency (black squares) and FWHM (red circles) of the main A1 CIGS peak in the Raman spectra versus density of defect D1. Dashed lines are included as guide for the eye.

Image of FIG. 5.
FIG. 5.

Raman spectra from absorber layers corresponding to cells with different densities of D2 defect: (a) D2 defect density 4.9 × 1015 cm−3, (b)D2 defect density ≥9.3 × 1015 cm−3. In the inset, the evolution of the OVC peak position is plotted vs the D2 defect density for the analyzed samples. Frequency positions of the main Raman peak from different OVC phases are also included in the inset. 16

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/content/aip/journal/apl/102/9/10.1063/1.4793418
2013-03-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4793418
10.1063/1.4793418
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