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DOS energy profile from selected cells showing the presence of two defects at 100 meV (D1) and 210 meV (D2).
Simulated JV curves for different D2 defect densities.
Raman spectrum from a CIGS absorber corresponding to cells with lower point defect densities, showing A1 and E/B CIGS peaks and OVC contribution at 150 cm−1 spectral region.
Frequency (black squares) and FWHM (red circles) of the main A1 CIGS peak in the Raman spectra versus density of defect D1. Dashed lines are included as guide for the eye.
Raman spectra from absorber layers corresponding to cells with different densities of D2 defect: (a) D2 defect density 4.9 × 1015 cm−3, (b)D2 defect density ≥9.3 × 1015 cm−3. In the inset, the evolution of the OVC peak position is plotted vs the D2 defect density for the analyzed samples. Frequency positions of the main Raman peak from different OVC phases are also included in the inset. 16
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