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Charge modulation infrared spectroscopy of rubrene single-crystal field-effect transistors
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Image of FIG. 1.

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FIG. 1.

(a) Molecular structure and (b) crystal structure of rubrene. (c) Transfer characteristics of the rubrene single-crystal FET. The inset of (c) shows a schematic of an FET.

Image of FIG. 2.

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FIG. 2.

(a) Transmittance spectrum of the Si/SiO2 substrate without gate voltage. (b) Polarized transmittance spectra of the rubrene single-crystal FET for E//a (red line) and E//b (blue line) without gate voltage.

Image of FIG. 3.

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FIG. 3.

Polarized charge modulation spectra for (a) E//a and (b) E//b. The measurement sequences of the gate voltages, V G = 0 V and V G = −10 V are shown in the inset of (a). Black broken lines indicate the results of the fitting. The ΔODSi spectra due to the field-induced electrons in Si are shown by green broken lines. The inset of (b) shows the net absorption due to field-induced holes in rubrene along the b axis. The black square indicates the absorption at the low-frequency limit obtained from the transfer characteristic. (c) Schematic of the reflection and transmission of the IR lights in the FET for V G = 0 V (left panel) and V G = −10 V (right panel).

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/content/aip/journal/apl/102/9/10.1063/1.4794055
2013-03-04
2014-04-21

Abstract

Polarized absorption spectra of hole carriers in rubrene single crystal field-effect transistors were measured in the infrared region (725–8000 cm−1) by charge modulation spectroscopy. The absorptions, including the superimposed oscillatory components due to multiple reflections within thin crystals, monotonically increased with decreasing frequency. The spectra and their polarization dependences were well reproduced by the analysis based on the Drude model, in which the absorptions due to holes in rubrene and electrons in the gate electrodes (silicon), and multiple reflections were fully considered. The results support the band transport of hole carriers in rubrene.

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Scitation: Charge modulation infrared spectroscopy of rubrene single-crystal field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794055
10.1063/1.4794055
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