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Terahertz emission and detection both based on high-Tc superconductors: Towards an integrated receiver
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10.1063/1.4794072
/content/aip/journal/apl/102/9/10.1063/1.4794072
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794072
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Setup combining a BSCCO intrinsic junction stack emitter and a YBCO grain boundary junction detector. (a) Schematic of BSCCO stack, (b) YBCO detector, (c) detector and emitter mounted on hyper-hemispheric Si lenses. Current ( for detector, for emitter) and voltage leads ( for detector, for emitter) are indicated in (c). In (b) the grain boundary (GB) is indicated by a solid white line.

Image of FIG. 2.
FIG. 2.

Properties of the THz emitter. (a) Current voltage characteristic and (b) THz emission power vs bias current, as detected by a Si bolometer.

Image of FIG. 3.
FIG. 3.

Properties of the THz detector: (a) differential resistance when irradiated by emitter, (b) current voltage characteristic with emitter on (red line) and off (black line). Upper inset in (b) compares experimental IVC with emitter off (black thick line) to simulated curve (green thin line). Lower inset compares experimental IVC with emitter on (red thick line) to simulated curve (green thin line, ac current Iac  = 0.93 mA). Model parameters are , Γ = 0.02. Matching current and voltage axes of experimental and calculated curves yield a critical current I 0 = 0.42 mA and a normal state resistance Rn  = 4.2 Ω.

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/content/aip/journal/apl/102/9/10.1063/1.4794072
2013-03-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz emission and detection both based on high-Tc superconductors: Towards an integrated receiver
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794072
10.1063/1.4794072
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