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(a) Plan view micrograph, showing four representative μ–LEDs. (b) Schematic cross-section of the device structure used.
Carrier lifetimes obtained through Eq. (4) as a function of the QW carrier density for two representative devices; a 44 μm diameter LED emitting at 450 nm, and a 54 μm diameter 520 nm emitter. (Inset) The A-coefficients deduced from the measured data from micro-LEDs of differing sizes for the two wavelengths.
Values of the radiative coefficient B obtained from the LI curves for 44 μm diameter 450 nm emitting and 54 μm diameter, 520 nm emitting devices. These are plotted against the carrier densities N obtained through Eq. (5) . Note that the 520 nm data is plotted on an expanded vertical scale. (Inset) LI data for the same two devices.
(a) The Auger current Ic as defined in Eq. (6) , plotted against N 3 for 44 μm diameter 450 nm emitting and 54 μm diameter, 520 nm emitting devices. The Auger coefficient C is given by the slope of this graph. (b) Values of the Auger coefficient C found in this work and reported in the literature. The red squares show the values of C obtained from the work presented here; each symbol represents the value of C obtained from an individual device. Black open symbols denote experimental 6,7,25 determinations of C found in the literature, while the blue lines show reported theoretical 26 values for C.
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