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Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices
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10.1063/1.4794535
/content/aip/journal/apl/102/9/10.1063/1.4794535
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794535
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The schematic structure of the Ni/AlOx/CNT/AlOx/Ni device; (b) the SEM picture of the device; (c) the current versus back gate voltage at different source drain voltages.

Image of FIG. 2.
FIG. 2.

Two dimensional color plot of the differential conductance dI/dV as a function of bias voltage and gate voltage at 4 K.

Image of FIG. 3.
FIG. 3.

(a) The colour plot of electrical current as a function of gate voltage and external magnetic field perpendicular to the substrate at fixed low bias VSD = 5 mV; (b), (c) with magnetic field in plane perpendicular to the stripes of the ferromagnetic contacts, the colour plot of electrical current as a function of external magnetic field at different gate voltage region at fixed low bias VSD = 5 mV. The white dashed lines guide the eye.

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/content/aip/journal/apl/102/9/10.1063/1.4794535
2013-03-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794535
10.1063/1.4794535
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