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The energy band diagram of a high-κ dielectric gate stack on Ge illustrating the well at the interface between IL and high-κ dielectric. Typical bound and unstable states are indicated in the figure.
Number of states (a) and average occupancy (b) as functions of W, L for tIL = 1.2 nm at various Vox .
Variation of number of states with device aspect ratio (a) and with device area (b) for tIL = 1.2 nm and L = 8 nm.
Variation of average occupancy with ΔECB .
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