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Electron trapping at the high-κ/GeO2 interface: The role of bound states
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10.1063/1.4794544
/content/aip/journal/apl/102/9/10.1063/1.4794544
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794544
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The energy band diagram of a high-κ dielectric gate stack on Ge illustrating the well at the interface between IL and high-κ dielectric. Typical bound and unstable states are indicated in the figure.

Image of FIG. 2.
FIG. 2.

Number of states (a) and average occupancy (b) as functions of W, L for tIL  = 1.2 nm at various Vox .

Image of FIG. 3.
FIG. 3.

Variation of number of states with device aspect ratio (a) and with device area (b) for tIL  = 1.2 nm and L = 8 nm.

Image of FIG. 4.
FIG. 4.

Variation of average occupancy with ΔECB .

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/content/aip/journal/apl/102/9/10.1063/1.4794544
2013-03-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trapping at the high-κ/GeO2 interface: The role of bound states
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794544
10.1063/1.4794544
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