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The calculated current-voltage characteristics at 300 K of the constructed p-n junction. Insert (a) shows zoom-in part under small biases of −0.4 V–0.4 V; Insert (b) shows the device model: the left and right boxes indicate the left and right electrodes, the region in-between are central scattering region.
The electronic structures of Cl-doped (a) and P-doped (b) MoS2 supercell, compared with undoped band structures (aligned with doped ones); the wavefunctions of the lowest conduction band of Cl-doped (c)and the highest valence band of P-doped (d) at K point of the Brillouin zone. The arrows indicate the position of impurity atoms.
The calculated current-voltage characteristics shown in semi-log coordinates (a) and the transmission eigenstates of the n-side under the biases of 0.05 V (b) and 0.5 V (c).
The current-temperature dependence under the biases of −0.7 V and +1.2 V.
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