1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
Rent:
Rent this article for
USD
10.1063/1.4794802
/content/aip/journal/apl/102/9/10.1063/1.4794802
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794802
/content/aip/journal/apl/102/9/10.1063/1.4794802
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/102/9/10.1063/1.4794802
2013-03-05
2014-10-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794802
10.1063/1.4794802
SEARCH_EXPAND_ITEM