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The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
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10.1063/1.4794802
/content/aip/journal/apl/102/9/10.1063/1.4794802
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794802
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The calculated current-voltage characteristics at 300 K of the constructed p-n junction. Insert (a) shows zoom-in part under small biases of −0.4 V–0.4 V; Insert (b) shows the device model: the left and right boxes indicate the left and right electrodes, the region in-between are central scattering region.

Image of FIG. 2.
FIG. 2.

The electronic structures of Cl-doped (a) and P-doped (b) MoS2 supercell, compared with undoped band structures (aligned with doped ones); the wavefunctions of the lowest conduction band of Cl-doped (c)and the highest valence band of P-doped (d) at K point of the Brillouin zone. The arrows indicate the position of impurity atoms.

Image of FIG. 3.
FIG. 3.

The calculated current-voltage characteristics shown in semi-log coordinates (a) and the transmission eigenstates of the n-side under the biases of 0.05 V (b) and 0.5 V (c).

Image of FIG. 4.
FIG. 4.

The current-temperature dependence under the biases of −0.7 V and +1.2 V.

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/content/aip/journal/apl/102/9/10.1063/1.4794802
2013-03-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/9/10.1063/1.4794802
10.1063/1.4794802
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