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Hole electrical transporting properties in organic-Si Schottky solar cell
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10.1063/1.4812988
/content/aip/journal/apl/103/1/10.1063/1.4812988
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/1/10.1063/1.4812988

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the Schottky Si/PEDOT:PSS cell. The ratio of the different layers is not in real scale.

Image of FIG. 2.
FIG. 2.

AFM and SKPM images (2 × 2 m) of PEDOT:PSS films annealed in different atmospheres. Topography of film annealed in (a) air and (b) nitrogen. SKPM image of film annealed in (c) air and (d) nitrogen. The insets in (c) and (d) were the line sections over the corresponding films.

Image of FIG. 3.
FIG. 3.

J–V characters of the Schottky Si/PEDOT:PSS cells with PEDOT:PSS film annealed in different atmospheres (a) under AM 1.5G irradiation at 100 mW cm and (b) in dark. (c) Band energy diagram of the PEDOT:PSS/Si interface. (d) Room-temperature inverse square of the capacitance (1/C) versus reverse bias (V) plots for the corresponding devices.

Image of FIG. 4.
FIG. 4.

(a) EQE spectra (b) Carrier concentration (N) versus V of the Schottky Si/PEDOT:PSS cells with PEDOT:PSS films annealed in different atmospheres.

Tables

Generic image for table
Table I.

Electronic output characteristics of the Schottky Si/PEDOT:PSS cells with PEDOT:PSS films annealed in different atmospheres.

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/content/aip/journal/apl/103/1/10.1063/1.4812988
2013-07-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole electrical transporting properties in organic-Si Schottky solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/1/10.1063/1.4812988
10.1063/1.4812988
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