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(a) Sketch of the fabricated device; (b) I–V characteristic of the device; (c) sketch of the situation in the gate region: the excess electrons at the AlO x /Co interface enhance the magnetic anisotropy, thereby creating a step in the anisotropy at the gate boundary as sketched in (d). This leads to a DW being pinned in the DW energy landscape sketched in (e). Upon application of a magnetic field H in (f), the DW can be depinned.
(a) Kerr microscopy images of DW behavior around the gate as a function of applied magnetic field (horizontal) and applied voltage (vertical). It is seen that the DW moves past the gate at a field strength which depends on the voltage. (b) Systematic measurement of the pinning field as a function of voltage. Similar slopes are found for up-down DWs (red discs, ) and down-up DWs (blue triangles, ). The error bar represents the standard deviation of the measurement (10repeats).
(a) Calculation of the voltage profile at the gate for an AlO x thickness . The resulting E-field as a function of x at the Co/AlO x interface (red dashed line) is plotted in (b) for (blue), (red), and (green), where the shaded area indicates the width of the E-field profile, which is seen to increase for thicker t. Panel (c) shows the expected DW pinning strength as a function of voltage based on the profile width δ plugged into Eq. (1) , along with a fit to the experimental data (dashed orange line).
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