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Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells
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10.1063/1.4819917
/content/aip/journal/apl/103/10/10.1063/1.4819917
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/10/10.1063/1.4819917
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the InGaP:Te/AlGaAs:C tunnel junction.

Image of FIG. 2.
FIG. 2.

Typical InGaP:Te/AlGaAs:C tunnel junction XRD showing the compressive and tensile strain of the InGaP:Te and AlGaAs:C layers, respectively.

Image of FIG. 3.
FIG. 3.

J-V for (a) InGaP:Te/AlGaAs:C T/T tunnel junction and (b) InGaP:Te/GaAs:Te/AlGaAs:C T/B/T tunnel junction utilizing a 30 Å GaAs:Te interfacial layer.

Image of FIG. 4.
FIG. 4.

Peak tunneling current range for various InGaP:Te/GaAs:Te/AlGaAs:C tunnel junction architectures with GaAs:Te interfacial layer thickness ranging from 0 Å to 45 Å.

Image of FIG. 5.
FIG. 5.

Voltage drop across the T/B/T TJs at a solar concentration of 2000× for (a) 30 Å GaAs:Te interfacial layers and (b) 45 Å GaAs:Te interfacial layers.

Image of FIG. 6.
FIG. 6.

Modeled peak tunneling current for T/T and T/B/T structures as a function of N for different GaAs:Te thicknesses. The results are from the current work shown along with the ALE grown device in Ref. .

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/content/aip/journal/apl/103/10/10.1063/1.4819917
2013-09-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/10/10.1063/1.4819917
10.1063/1.4819917
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