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Schematic of the InxGa1−xP:Te/Al0.6Ga0.4As:C tunnel junction.
Typical InxGa1−xP:Te/Al0.6Ga0.4As:C tunnel junction XRD showing the compressive and tensile strain of the InxGa1−xP:Te and Al0.6Ga0.4As:C layers, respectively.
J-V for (a) InxGa1−xP:Te/Al0.6Ga0.4As:C T/T tunnel junction and (b) InxGa1−xP:Te/GaAs:Te/Al0.6Ga0.4As:C T/B/T tunnel junction utilizing a 30 Å GaAs:Te interfacial layer.
Peak tunneling current range for various InxGa1−xP:Te/GaAs:Te/Al0.6Ga0.4As:C tunnel junction architectures with GaAs:Te interfacial layer thickness ranging from 0 Å to 45 Å.
Voltage drop across the T/B/T TJs at a solar concentration of 2000× for (a) 30 Å GaAs:Te interfacial layers and (b) 45 Å GaAs:Te interfacial layers.
Modeled peak tunneling current for T/T and T/B/T structures as a function of Neff for different GaAs:Te thicknesses. The results are from the current work shown along with the ALE grown device in Ref. 2 .
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