Full text loading...
Crystalline fraction versus time calculated using the analytical approximation in Eqs. (2) and (3) , compared to a solution using the convolution based numerical technique.
Reaction rate bandwidth (for r = 0.1) as a function of the normalized activation energy ε for different frequency factors using Eq. (12) . The activation energies for Ge2Sb2Te5 (from Table I ) and AgInSbTe (Ref. 18 ) are shown for comparison. The dashed lines are for n = 1, while the solid lines are for n = 3. The heat source parameters are fixed to the values shown in Table I .
Effect of the heat source parameters including thermal relaxation time tc and normalized peak temperature θp on ωB determined using Eq. (12) . The kinetic parameters were fixed at the values in Table I for n = 1. The dashed lines indicate how changes in thermal diffusion time tc correlate and scale with changes in thickness of an amorphous phase-change material stack with composition ZnS-SiO2/Ge2Sb2Te5/ZnS-SiO2/Si substrate from Ref. 11 heated by a femtosecond laser source with 20mJ/cm2 peak fluence (corresponding to peak temperature of 850 K in the top of the phase-change layer in the material stack).
List of typical kinetic parameters for the Ge2Sb2Te5 material 2 and assumed heat source parameters used in the calculations.
Article metrics loading...