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Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic representation of the conduction (blue) and valence (red) band alignments of the CQW region. The lowest (highest) electron (hole) energy levels ( ) are indicated by dashed lines. (b) Dispersion relation of and with the hybridization gap opening at the crossing points of the respective dispersion curves. (c) Magnetotransport data of an InAs/GaSb/AlSb CQW in the electron regime (at a top gate voltage of 4 V, i.e. an electron density of ). Red: longitudinal resistance, black: transverse resistance.

Image of FIG. 2.
FIG. 2.

Near-band-edge PL spectra of GaAs structures grown using both gallium sources. Blue: low mobility gallium, red: high mobility gallium. The peaks are labeled according to references.

Image of FIG. 3.
FIG. 3.

Longitudinal resistance of HM Ga (red) and LM Ga (blue) InAs/GaSb/AlSb CQW samples in function of top gate voltage at zero perpendicular magnetic field. The dashed lines indicate the position of the CNP at which was determined. Inset: for different B-fields from 0 to 7 T.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells