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We simulate resistance distributions of multilevel oxide bipolar resistive random access memories (ReRAMs) through a physical model with Monte Carlo method. The model is used to explain frequently noticed proportionality relationship between distributions of resistances and multi-levels program voltages. By comparing with the experimental results obtained with TaO/TaO bipolar ReRAM, the model is verified to have a good consistency with experiments not only qualitatively but also quantitatively. We demonstrate that the resistance distributions responses are basically determined by the ion migration barrier in the resistance varying thin oxide layer which means that it is a nearly intrinsic material property.


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