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Photoluminescence spectra from (a) a 1.0 ML GaSb quantum well, (b) a 1.5 ML GaSb quantum well, and (c) a 2.3 ML GaSb QD structure showing QD emission at 1.15 eV and a wetting layer peak at 1.36 eV. All intensities are normalized to the GaAs peak intensity, which is at 1.45 eV.
Three-dimensional reconstructions of atom probe tomography data for (a) a 1.0 ML quantum well and (b) a 1.5 ML GaSb quantum well. The Sb atoms are shown in blue, and Ga and As are shown in green and red, respectively. The Sb concentration profile for each structure is shown to the left of the three-dimensional reconstruction. Sb concentration profiles are taken using a 10 nm cylinder with a 0.2 nm bin size through the center of the structures, perpendicular to the GaSb layers.
Sb concentration profiles for the 1.0 ML and 1.5 ML quantum wells and the wetting layer in the 2.3 ML QD sample. All Sb concentration profiles are taken using a 10 nm diameter area and a bin size of 0.2 nm, perpendicular to the GaSb layers. Solid lines are fits to the Sb concentration profiles. Profiles are aligned at the leading edge.
(a) A three-dimensional reconstruction of atom probe tomography data from the 2.3 ML QD sample showing one compact QD and one disintegrated cluster of smaller islands with a 14% Sb concentration surface highlighted in yellow. (b) Sb concentration profiles through the QD, cluster, and wetting layer. The profiles for the QD and wetting layer are taken using a 10 nm diameter area and a bin size of 0.2 nm, perpendicular to the GaSb layer. The profile for the cluster was taken using a 4 nm diameter cylinder only through the small GaSb islands. Solid lines are fits to the Sb concentration profiles. Profiles are aligned at the leading edge. The inset shows a top-down view of the GaSb nanostructures analyzed.
Fits for Sb concentration profiles.
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