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Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application
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10.1063/1.4824303
/content/aip/journal/apl/103/14/10.1063/1.4824303
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/14/10.1063/1.4824303

Figures

Image of FIG. 1.
FIG. 1.

(a) Sheet resistance of GeSbTe, GeTe and SnTe-doped GeTe films as a function of the temperature with the heating rate of 10 °C/min; (b) Arrhenius fitting plots of GeSbTe, GeTe and SnTe-doped GeTe films for evaluating data retention.

Image of FIG. 2.
FIG. 2.

(a) X-ray diffraction patterns of GeTe and GeSnTe films annealed at 300 °C for 2 min in N atmosphere. XPS spectra for GeTe and GeSnTe films annealed at 300 °C for 2 min in N atmosphere: (b) Te 3, (c) Ge 3, and (d) Sn 3.

Image of FIG. 3.
FIG. 3.

(a) The cross section TEM image of a T-shaped PCRAM cell; SET and RESET performance of PCRAM cell based on (b) GeSnTe and (c) GST with various pulse widths; (d) Reversible switching endurance characteristics of the GeSnTe based cell.

Image of FIG. 4.
FIG. 4.

The GeSnTe film annealed at 300 °C for 2 min in N atmosphere for (a) the bright field TEM image, (b) the SAED pattern, (c) and (d) the HRTEM images.

Tables

Generic image for table
Table I.

Thermal properties and crystal structures of GeTe and SnTe.

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/content/aip/journal/apl/103/14/10.1063/1.4824303
2013-10-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/14/10.1063/1.4824303
10.1063/1.4824303
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