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(a) Sheet resistance of Ge2Sb2Te5, Ge3Te2 and SnTe-doped Ge3Te2 films as a function of the temperature with the heating rate of 10 °C/min; (b) Arrhenius fitting plots of Ge2Sb2Te5, Ge3Te2 and SnTe-doped Ge3Te2 films for evaluating data retention.
(a) X-ray diffraction patterns of Ge3Te2 and Ge44Sn14Te42 films annealed at 300 °C for 2 min in N2 atmosphere. XPS spectra for Ge3Te2 and Ge44Sn14Te42 films annealed at 300 °C for 2 min in N2 atmosphere: (b) Te 3d, (c) Ge 3d, and (d) Sn 3d.
(a) The cross section TEM image of a T-shaped PCRAM cell; SET and RESET performance of PCRAM cell based on (b) Ge44Sn14Te42 and (c) GST with various pulse widths; (d) Reversible switching endurance characteristics of the Ge44Sn14Te42 based cell.
The Ge44Sn14Te42 film annealed at 300 °C for 2 min in N2 atmosphere for (a) the bright field TEM image, (b) the SAED pattern, (c) and (d) the HRTEM images.
Thermal properties and crystal structures of GeTe and SnTe.
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