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/content/aip/journal/apl/103/17/10.1063/1.4826223
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/content/aip/journal/apl/103/17/10.1063/1.4826223
2013-10-21
2016-09-26

Abstract

The identity of Zener breakdown is interpreted as metal-insulator transition (MIT). For a negative-differential-resistance (NDR) Si-transistor as a sort of MIT transistor, a structure of “reverse-pn-junction (insulator role for tunneling) and MIT” is proposed. Its characteristics are investigated through the reverse active mode of a donor-acceptor-donor bipolar transistor, similar to the NDR-transistor structure. As evidence of the MIT at outlet layer, the Ohmic behavior in I-V measurements and the NDR in a 100 KHz power pulse are observed. It switches a much higher current than a bipolar transistor when the MIT occurs and can be used as a power device.

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