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Microwave characterization of Ti/Au-graphene contacts
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10.1063/1.4826645
/content/aip/journal/apl/103/17/10.1063/1.4826645
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/17/10.1063/1.4826645

Figures

Image of FIG. 1.
FIG. 1.

Micrograph of a fabricated CTLM structure on SiO/Si with  = 25 m. Magnified area indicates the high quality of the transferred CVD grown graphene.

Image of FIG. 2.
FIG. 2.

DC CTLM extrapolation on SiO/Si and silica glass. Inset: structure layout with relevant dimensions indicated.

Image of FIG. 3.
FIG. 3.

Graphene on fused silica. Real part (circles), from bottom to top  = 5–25 m, and imaginary part (squares), from top to bottom  = 5–25 m. N.B. scaled ×4.

Image of FIG. 4.
FIG. 4.

Equivalent circuit of graphene Corbino structure on fused silica substrate, where and represent inner patch (outer ground plane), respectively.

Image of FIG. 5.
FIG. 5.

Graphene on SiO/Si. Real part (circles), from bottom to top  = 5–25 m, and imaginary part (squares), from top to bottom  = 5–25 m. N.B. scaled ×2.

Image of FIG. 6.
FIG. 6.

Equivalent circuit of graphene Corbino structure on SiO/Si substrate, where / and represent the lossy oxide and conductive Si surface, respectively.

Image of FIG. 7.
FIG. 7.

Physical outline of the contact interface with the corresponding lumped circuit model. The mean separation results in a contact capacitance .

Tables

Generic image for table
Table I.

Contact resistivity and sheet resistance from Eqs. (1) and (2) (data within brackets) based on two sets of CTLM structures each.

Generic image for table
Table II.

Capacitance from curve fitting and extrapolation on fused silica (first row) and SiO/Si (second row).

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/content/aip/journal/apl/103/17/10.1063/1.4826645
2013-10-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave characterization of Ti/Au-graphene contacts
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/17/10.1063/1.4826645
10.1063/1.4826645
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