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Formation of a passivating CH3
interface during moderate heating of CH3
5. A. Ferreira da Silva, N. Veissid, C. Y. An, I. Pepe, N. Barros de Oliveira, and A. V. Batista da Silva, Appl. Phys. Lett. 69, 1930 (1996).
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Layers of CH3NH3PbI3 are investigated by modulated surface photovoltage spectroscopy (SPV) during heating in vacuum. As prepared CH3NH3PbI3 layers behave as a p-type doped semiconductor in depletion with a band gap of 1.5 eV. After heating to 140 °C the sign of the SPV signals of CH3NH3PbI3 changed concomitant with the appearance of a second band gap at 2.36 eV ascribed to PbI2, and SPV signals related to charge separation from defect states were reduced after moderate heating.
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