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(a) One- and (b) two-column growth mode technique. (c) A representative TEM image of the MQW structure with each QW labeled.
Calculated emission energy as a function of QW width for different In concentrations x assuming b = 2.0 eV and T = 12 K. The green squares represent measured TIPL QW emission averaged over many locations on the sample. The horizontal error bars represent a 10% uncertainty in QW thickness.
(a) TIPL spectra taken at 45 K for a-plane GaN substrate (black) and InGaN MQW (red). The peak labeled BE is attributed to bound excitons, DE indicates defect related emission, and 1, 2, 3/4 indicates QW emission. The grey regions represent the site-to-site spectral variation in emission peak location for different spatial sites. (b) Temperature sequenced TIPL for InGaN MQW from 12 K to 300 K. (c) TRPL lifetime spectra for the dominant, faster decaying component measured at 12 K (black) and 300 K (red). The horizontal line at 30 ps indicates the instrument limited temporal response.
Temperature dependence of PL intensities from the various MQW emission peaks.
A representative TRPL decay curve of MQW emission at 12 K over an 8 meV window centered at 3.10 eV (black). The fitting function is a bi-exponential decay (red), and the instrumental response function is shown in blue.
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