1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
Rent:
Rent this article for
USD
10.1063/1.4827536
/content/aip/journal/apl/103/18/10.1063/1.4827536
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827536
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) One- and (b) two-column growth mode technique. (c) A representative TEM image of the MQW structure with each QW labeled.

Image of FIG. 2.
FIG. 2.

Calculated emission energy as a function of QW width for different In concentrations x assuming b = 2.0 eV and T = 12 K. The green squares represent measured TIPL QW emission averaged over many locations on the sample. The horizontal error bars represent a 10% uncertainty in QW thickness.

Image of FIG. 3.
FIG. 3.

(a) TIPL spectra taken at 45 K for a-plane GaN substrate (black) and InGaN MQW (red). The peak labeled BE is attributed to bound excitons, DE indicates defect related emission, and 1, 2, 3/4 indicates QW emission. The grey regions represent the site-to-site spectral variation in emission peak location for different spatial sites. (b) Temperature sequenced TIPL for InGaN MQW from 12 K to 300 K. (c) TRPL lifetime spectra for the dominant, faster decaying component measured at 12 K (black) and 300 K (red). The horizontal line at 30 ps indicates the instrument limited temporal response.

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL intensities from the various MQW emission peaks.

Image of FIG. 5.
FIG. 5.

A representative TRPL decay curve of MQW emission at 12 K over an 8 meV window centered at 3.10 eV (black). The fitting function is a bi-exponential decay (red), and the instrumental response function is shown in blue.

Loading

Article metrics loading...

/content/aip/journal/apl/103/18/10.1063/1.4827536
2013-10-29
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827536
10.1063/1.4827536
SEARCH_EXPAND_ITEM