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Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
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10.1063/1.4827539
/content/aip/journal/apl/103/18/10.1063/1.4827539
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827539
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Figures

Image of FIG. 1.
FIG. 1.

Structural and Raman characterization of III-nitride layers on CVD graphene. (a) Integrated Raman intensity maps across a section of the sample for (1) AlN epilayer peak (2) the graphene 2D band and (3) silicon substrate peak indicating the presence of the graphene layer after III-nitride growth. (b) A representative Raman spectrum taken at the point marked with a + in the intensity maps. (c) Cross-sectional TEM image of the AlN buffer region showing lattice planes with a spacing of 2.38 Å. (d) FE-SEM image showing the surface morphology of GaN deposited directly on graphene where large chunks of GaN and Ga droplets are seen. (e) FE-SEM image showing conformal coverage of GaN grown at 1040 °C on AlN buffer layers on graphene. (f) Powder x-ray diffraction profile of film in (d) showing preferential orientation.

Image of FIG. 2.
FIG. 2.

Photoluminescence from different III-nitride MQWs on CVD graphene. (a) RT and LT PL from a 20-period GaN/AlGaN multiquantum well stack grown on graphene (inset shows the cross sectional TEM image of the MQW region). (b) RT PL from a series of three AlGa N/AlGaN 20 period MQWs of varying aluminium content in the QW. (c) RT and LT PL from a 7-period GaN/InGaN MQW stack grown on graphene. (d) RT PL from two InGaN/GaN 7-period MQW stacks grown on graphene at 725 °C and 775 °C, respectively. Reducing the growth temperature of the InGaN QW enhances indium incorporation into the well and causes a red-shift of the emission wavelength.

Image of FIG. 3.
FIG. 3.

Release and transfer process for the III-nitride layer on graphene. (a)–(e) show the schematic process steps: (a) CVD graphene is transferred on SiO-coated Si substrate, (b) III-nitride film is grown on that substrate, (c) PMMA is spin-coated on the III-nitride film on graphene, (d) the underlying SiO layer is etched in a buffered HF solution, (e) the graphene-bound nitride layer floats up to the surface, image shown in part (f). After appropriate rinsing, it can be transferred to a flexible substrate like (g) a plastic (Kapton) film. (h) An image of the RT PL from the free-standing film after transfer. (i) The spectra before and after transfer shows that there is no degradation in the optical characteristics through the transfer process.

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/content/aip/journal/apl/103/18/10.1063/1.4827539
2013-10-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827539
10.1063/1.4827539
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