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Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor
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10.1063/1.4827817
/content/aip/journal/apl/103/18/10.1063/1.4827817
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827817
/content/aip/journal/apl/103/18/10.1063/1.4827817
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/content/aip/journal/apl/103/18/10.1063/1.4827817
2013-10-29
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/18/10.1063/1.4827817
10.1063/1.4827817
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