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Temperature dependence of (a) electrical conductivity and (b) Seebeck coefficient of graphene films grown in argon and different partial pressures of nitrogen. The switching from p-type to n-type conduction is evident from the zero cross-over of Seebeck coefficient in N-doped graphene films. (c) θ–2θ XRD pattern for pristine and N-doped graphene films and (d) the SEM micrograph of a graphene film.
Raman spectra of the pristine and N-doped graphene films, normalized with respect to the graphitic G-band.
(a) XPS survey spectra of the films Ar20 and N250. (b) High resolution spectra of N1s peak of the film N250, along with the deconvoluted peaks. (c) Schematic of different kinds of bonding of N atoms in the graphene framework. N1 refers to pyridinic, N2 to nitrile, N3 to graphitic, N4 to pyridinic N-oxide, and N5 to chemisorbed nitrogen oxides.
(a) Schematic diagram of the fabricated diode structure (Si/SiO2/n-graphene/p-graphene/Ag) used in this study and (b) current (I) vs. applied voltage (V) characteristic of the diode. Possible change in potential barrier at the p-n junction at (c) 300 K and (d) 443 K, under no applied bias.
Intensity of D (ID), G (IG), and 2D (I2D) bands of the Raman spectra of the graphene films formed using different partial pressures of nitrogen and Argon. The ratio of the intensities and the electrical conductivity of the films at 300 K are also presented.
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