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Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
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10.1063/1.4811784
/content/aip/journal/apl/103/2/10.1063/1.4811784
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/2/10.1063/1.4811784
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Figures

Image of FIG. 1.
FIG. 1.

(a) I-V and corresponding Gm-V at linear region measurement shows no significant change in S.S. (b) Forward I-V and the reverse I-V (source/drain interchanged) at the saturation region measurement after dynamic HCS for high-k/metal gate n-MOSFETs. Inset shows the lateral energy band diagram with hole trapping lowering the V at the reverse I-V measurement.

Image of FIG. 2.
FIG. 2.

I-V and corresponding I-V measurement at V = 2.4 V showing GIDL current decrease after dynamic HCS. Inset shows that hole trapping increases band-to-band tunneling distance.

Image of FIG. 3.
FIG. 3.

I-V shows an increase of 330% and V shift of 0.5 V toward the negative direction during dynamic HCS. Inset shows one-side floating CP technique with floating source or drain terminal to measure I.

Image of FIG. 4.
FIG. 4.

(a) Diagram of n-MOSFET structure showing hole trapping and interface state generation at the drain side. (b) The lateral energy band diagram indicating that trapping holes form a buffer region at the depletion region to reduce the stress electron field. (c) The energy band diagram shows only shallow states generated after dynamic HCS.

Image of FIG. 5.
FIG. 5.

Normalized C curves at various frequencies before and after dynamic HCS. Inset shows the lateral energy band diagram of electron trapping and detrapping behavior for higher and lower measurement frequencies.

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/content/aip/journal/apl/103/2/10.1063/1.4811784
2013-07-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/2/10.1063/1.4811784
10.1063/1.4811784
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