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Plasmon energy from strained GaN quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

STEM bright field image showing a set of three GaN QWs (dark contrast) with nominal well-width of 2 nm, 3 nm, and 4 nm separated by 30 nm-thick AlN barrier layers.

Image of FIG. 2.
FIG. 2.

(a) Plasmon energy map of the three GaN QWs. (b) A plot (x) of an integrated line profile across the QWs clearly exhibiting three distinct energies at 20.04 eV, 20.39 eV, and 20.77 eV corresponding, respectively, to the 4 nm, 3 nm, and 2 nm as-grown GaN QWs. An error of about 0.07 eV is assumed. The plasmon energy of the AlN-barrier is found to be around 21.2 eV, a value that is close to the one measured from thick AlN buffer layers (see inset).

Image of FIG. 3.
FIG. 3.

(a) Plasmon energy as a function of the QW width (empty circles) as extracted from Fig. 2(b) . A correction with respect to the interface influence is presented (full circles). Calculated interface contributions are 0.415 eV, 0.289 eV, and 0.215 eV corresponding, respectively, to the 2 nm, 3 nm, and 4 nm QWs. (b) Deduced plasmon energy as a function of the inverse square of the QW width after subtracting the strain contribution (empty squares). Calculated strain contributions are 0.355 eV, 0.355 eV, and 0.349 eV corresponding, respectively, to the 2 nm, 3 nm, and 4 nm QWs. A trend is noted with a dashed line showing the linear 1/ dependence. The dashed line (aguide for the eye) is put to intercept the GaN bulk value, which is 19.4 eV.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasmon energy from strained GaN quantum wells