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Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities
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View: Figures


Image of FIG. 1.
FIG. 1.

PL spectra taken at ∼10 K of a 2.5 m microdisk (a) and for reference, of an unprocessed part of the sample (b) in the range from 3.2 eV to 4.2 eV. Insets: (top) Side view scanning electron microscopy image of a typical 2.5 m microdisk and a schematic structure of our epitaxial layers (bottom).

Image of FIG. 2.
FIG. 2.

Power dependent PL spectra of the high energy region of the QD ensemble spectrum. The excitation density was increased from 5 kW cm to 720 kW cm. The analyzed lasing modes at E = 3.90 eV (mode 1) and E = 3.98 eV (mode 2) are highlighted in grey.

Image of FIG. 3.
FIG. 3.

Plot of the integral mode intensity versus the excitation power of the lasing modes at E = 3.90 eV and E = 3.98 eV in a double logarithmic scale. The experimental results are indicated by dots, the solid lines display fits according to the theoretical model. The dashed lines show the low and high power asymptotes.

Image of FIG. 4.
FIG. 4.

FWHM of mode 2 at E = 3.98 eV as a function of the excitation power.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities