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The metallic interface between insulating NdGaO3 and SrTiO3 perovskites
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10.1063/1.4830042
/content/aip/journal/apl/103/20/10.1063/1.4830042
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4830042
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of the surface of (a) bare {001} TiO-terminated STO substrate and (b) deposited NGO film (10 u.c.) over an area of 3 m × 3 m. The height profiles along the lines on (a) and (b) are shown below each image, respectively; (c) Typical RHEED intensity oscillations recorded during the deposition of a 10 u.c. NGO film. The inset shows the RHEED pattern of the deposited NGO film.

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of interface sheet resistance of 20 u.c. {001} NGO/STO samples deposited at different conditions, and a 20 u.c. {001} STO/STO sample deposited at 10−3 mbar O pressure. (b) Carrier mobility and sheet carrier density of 20 u.c. {001} NGO/STO samples deposited at different conditions as functions of temperature.

Image of FIG. 3.
FIG. 3.

Low temperature (7 K) sheet resistance of the {001} (square) and {111} (triangle) NGO/STO interfaces as a function of NGO thickness. The asterisk and dot indicate the sheet resistance value of the bare {001} and {111} STO substrate, respectively.

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of interface sheet resistance of 20 u.c. {111} NGO/STO samples deposited at different conditions. The inset shows the AFM image of the {111} NGO surface (left) and the height profile (right) along the line on the AFM image. (b) Carrier mobility and sheet carrier density of 20 u.c. {111} NGO/STO samples deposited at different conditions as functions of temperature.

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/content/aip/journal/apl/103/20/10.1063/1.4830042
2013-11-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The metallic interface between insulating NdGaO3 and SrTiO3 perovskites
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4830042
10.1063/1.4830042
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