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Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias
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10.1063/1.4830368
/content/aip/journal/apl/103/20/10.1063/1.4830368
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4830368
/content/aip/journal/apl/103/20/10.1063/1.4830368
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/content/aip/journal/apl/103/20/10.1063/1.4830368
2013-11-13
2014-12-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4830368
10.1063/1.4830368
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