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XPS depth profile of multilayer oxide with Pt/Ta2O5/TaOx/TiO2/Pt stacks. The highest intensity of oxygen was observed in both interfaces. The band diagram of the proposed device stack was shown.
(a) Typical I-V switching characteristics of 15 cells with 100 cycles in Pt/Ta2O5/TaOx/TiO2/Pt stacks. (b) Low voltage is applied to the selector device, and the current is suppressed in the thicker tunneling barrier. (c) High voltage is applied to the selector device, and the larger current flows through the thin tunneling barrier.
ION vs. IOFF plot as a function of annealing time. When the annealing time is increased from 10 to 30 min, IOFF as leakage current is significantly reduced.
XPS spectra of Ta2O5/TaOx films of TE interface region (A) and bulk region (B), and TEM images after oxidation for (a) 10 min and (b) 30 min. The main composition at the surface is Ta2O5, an insulator, and in the bulk region, sub-oxides such as TaOx.
(a) Dependence of I-V characteristics on the top electrode materials with Ti, W, Ni, and Pt. (b) Dependence of I-V characteristics on insulating oxide materials with Al2O3, HfO2, and TiO2 at the bottom interface.
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