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Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
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10.1063/1.4831680
/content/aip/journal/apl/103/20/10.1063/1.4831680
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4831680
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS depth profile of multilayer oxide with Pt/TaO/TaO/TiO/Pt stacks. The highest intensity of oxygen was observed in both interfaces. The band diagram of the proposed device stack was shown.

Image of FIG. 2.
FIG. 2.

(a) Typical I-V switching characteristics of 15 cells with 100 cycles in Pt/TaO/TaO/TiO/Pt stacks. (b) Low voltage is applied to the selector device, and the current is suppressed in the thicker tunneling barrier. (c) High voltage is applied to the selector device, and the larger current flows through the thin tunneling barrier.

Image of FIG. 3.
FIG. 3.

I vs. I plot as a function of annealing time. When the annealing time is increased from 10 to 30 min, I as leakage current is significantly reduced.

Image of FIG. 4.
FIG. 4.

XPS spectra of TaO/TaO films of TE interface region (A) and bulk region (B), and TEM images after oxidation for (a) 10 min and (b) 30 min. The main composition at the surface is TaO, an insulator, and in the bulk region, sub-oxides such as TaO.

Image of FIG. 5.
FIG. 5.

(a) Dependence of I-V characteristics on the top electrode materials with Ti, W, Ni, and Pt. (b) Dependence of I-V characteristics on insulating oxide materials with AlO, HfO, and TiO at the bottom interface.

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/content/aip/journal/apl/103/20/10.1063/1.4831680
2013-11-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/103/20/10.1063/1.4831680
10.1063/1.4831680
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